Fabrication of a n-ZnO/p-Si heterojunction diode by ultra-high vacuum magnetron sputtering

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• 作者：Seong Gook Cho ; Dong Uk Lee ; Sang Woo Pak ; Tschang-Uh Nahm ; Eun Kyu Kim ; ^{ek-kim@hanyang.ac.kr}
• 关键词：Zinc oxide ; Heterojunction ; Electronic transport ; Thin films
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 July, 2012
• 卷：520
• 期：18
• 页码：5997-6000
• 文件大小：757 K

摘要

Heterojunction diodes of n-type ZnO were fabricated on a p-type Si(100) substrate using an ultra-high vacuum radio frequency magnetron sputtering method at room temperature. A short-time post-annealing process was performed to prevent inter-diffusion of Zn, dopants, and Si atoms. The post-annealing process at 600 掳C enhanced the crystallinity of ZnO films and produced a high forward to reverse current ratio of the heterojunction diode with a barrier height of approximately 0.336 eV. A thin SiO_x layer at the interface of the ZnO film and Si substrate appeared distinctly at the 600 掳C annealing, however the post-annealing at 700 掳C showed an a-(Zn_2xSi_{1 鈭?#xA0;x}O₂) structure caused by diffusion of silicon into the ZnO film. In the n-ZnO/p-Si sample annealed at 700 掳C, a rapid change in the barrier height was considered due to the effect of the dopant segregation from the substrate and deformation of the a-SiO_x structure.