A comparative study on the growth of germanium-silicon single crystals grown by the vertical Bridgman and axial heat processing techniques

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• 作者：Aidin Dario^a ; Hasan Ozgen Sicim^b ; Ercan Balikci^b ; ^{ercan.balikci@boun.edu.tr}
• 关键词：A1. Morphological stability ; A1. Segregation ; A2. Axial heat processing ; A2. Bridgman technique ; B1. Germanium silicon crystals
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：15 July, 2012
• 卷：351
• 期：1
• 页码：1-8
• 文件大小：1714 K

摘要

The influence of a submerged baffle on single crystal growth of germanium-silicon is investigated. Twelve crystals have been grown. Eight of them have been grown using the axial heat processing (AHP) technique which makes use of a baffle submerged into the melt. The other crystals have been grown using the conventional vertical Bridgman (VB) technique. Crystals have been grown with 5 and 12 at%silicon at two different velocities, 0.75 and 2 mm/h. Compositional mapping of crystals has been performed by energy dispersive X-ray spectroscopy (EDS). Then, effects of a submerged baffle on the longitudinal and radial solute distribution and interface stability have been discussed.