Fluorine in Ge: Segregation and EOR-defects stabilization

详细信息	查看全文 | 推荐本文 |

• 作者：S. Boninelli^a ; ^{simona.boninelli@ct.infn.it} ; G. Impellizzeri^a ; F. Priolo^a ; E. Napolitani^b ; C. Spinella^c
• 关键词：Germanium ; Defects ; Impurities ; Segregation
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2012
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：1 July, 2012
• 卷：282
• 期：Complete
• 页码：21-24
• 文件大小：685 K

摘要

In this paper we investigate the F behavior in Ge during solid phase epitaxy (SPE) and post-SPE annealing. Fluorine implanted with a fluence of 1 脳 10¹⁵ F/cm² and an energy of 35 keV induced the formation of an amorphous Ge layer. Detailed chemical and structural characterizations of the as implanted and annealed samples evidenced a strong segregation of F at the moving amorphous/crystalline interface, leading to a remarkable SPE rate retardation. In addition, we observed that F accumulates in correspondence of the end of range (EOR) defects. The comparison between the thermal evolution of damage produced by self-implantation and F implantation in Ge suggests that F increases significantly the stability of EOR. Such behavior clarifies the role of F in modifying the As diffusion in Ge recently reported in literature.