Selenization of CIGS Films with Different Cu-In-Ga Alloy Precursors

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• 作者：Wei-Ting Lin^a ; Sheng-Hui Chen^a ; ^{ericchen@dop.ncu.edu.tw} ; Shin-Hao Chan^a ; Chung-Lun Hsieh^a ; Sung-Cheng Hu^b ; Yung-Tien Lu^b ; Hsiang-Chun Cheng^b
• 关键词：CIGS ; precursor ; diffusion ; selenization ; phase-transition
• 刊名：Procedia Engineering
• 出版年：2012
• 期刊代码：P56_18777058
• 类别：et
• 出版时间：2012
• 卷：36
• 期：Complete
• 页码：41-45
• 文件大小：388 K

摘要

CIG precursors were deposited on the glass from the Cu-Ga alloy and Indium targets by co-sputtering method. The results show that when the sputtering pressure was increased, the surface morphology was changed from a roughness island-crystalline (RMS=165 nm) to a smaller pellet-crystalline (RMS=54.4 nm). At the same time the Cu/(In+Ga) ratio was increased. So, the crystallization of Cu₁₁In₉ phase was increasing and CuIn₂ phase was decreasing in the CIG precursor. Then, a layer of selenium was coated on the precursor and the precursor was selenized using RTA selenization of 600 掳C. The results show a good stoichiometric and crystallization under the parameters of the sputtering pressure at 4.2 mTorr of CIG precursors.