Hydrogen interaction with GaN metal-insulator-semiconductor diodes

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• 作者：Y. Irokawa ; ^{IROKAWA.Yoshihiro@nims.go.jp}
• 关键词：GaN ; Hydrogen ; Diodes ; Dielectrics
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：1 August, 2012
• 卷：407
• 期：15
• 页码：2957-2959
• 文件大小：267 K

摘要

Interaction mechanism of hydrogen with GaN metal-insulator-semiconductor (MIS) diodes is investigated, focusing on the metal/semiconductor interfaces. For MIS Pt-GaN diodes with a SiO₂ dielectric, the current-voltage (I-V) characteristics reveal that hydrogen changes the conduction mechanisms from Fowler-Nordheim tunneling to Poole-Frenkel emission. In sharp contrast, Pt-Si_xN_y-GaN diodes exhibit Poole-Frenkel emission in nitrogen and do not show any change in the conduction mechanism upon exposure to hydrogen. The capacitance-voltage (C-V) study suggests that the work function change of the Schottky metal is not responsible mechanism for the hydrogen sensitivity.