High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices

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• 作者：Woo Sik Jeon ; Jung Soo Park ; Ling Li ; Dae Chul Lim ; Young Hoon Son ; Min Chul Suh ; ^{mcsuh@khu.ac.kr} ; Jang Hyuk Kwon ; ^{jhkwon@khu.ac.kr}
• 关键词：Charge generation ; Recombination ; p-n Junction ; Low voltage
• 刊名：Organic Electronics
• 出版年：2012
• 期刊代码：137_15661199
• 类别：et
• 出版时间：June, 2012
• 卷：13
• 期：6
• 页码：939-944
• 文件大小：512 K

摘要

We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 脳 10^鈭? cm²/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248%at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m² was improved by 22%and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications.