A comparative study of ferroelectric triglycine sulfate (TGS) crystals grown by conventional slow evaporation and unidirectional method

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• 作者：M. Senthil Pandian^a ; P. Ramasamy^a ; ^{proframasamy@hotmail.com} ; ^{ramasamyp@ssn.edu.in} ; Binay Kumar^b
• 关键词：B. Crystal growth ; D. Defects ; D. Ferroelectricity ; D. Piezoelectricity ; D. Optical properties
• 刊名：Materials Research Bulletin
• 出版年：2012
• 期刊代码：60_00255408
• 类别：ms
• 出版时间：June, 2012
• 卷：47
• 期：6
• 页码：1587-1597
• 文件大小：3292 K

摘要

Unidirectional 銆? 1 0銆?TGS single crystal of diameter 35 mm and length 80 mm was grown by Sankaranarayanan-Ramasamy (SR) method. Nearly two times higher d₃₃ value has been obtained for the SR grown TGS crystal compared to conventional grown TGS. The etch pit density of SEST and SR method grown TGS crystal is 2.1 脳 10² cm^鈭? and 1.5 脳 10² cm^鈭? respectively. The values of hardness were found to be 152 kg/mm² for SR grown TGS and 108 kg/mm² for SEST grown TGS crystal. The average laser damage threshold obtained on the SEST grown TGS crystal was 29 mJ/cm² whereas a high damage threshold of 39 mJ/cm² was obtained for the SR grown crystal. The SR method grown TGS has 5%higher transmittance as against conventional method grown crystal. Dielectric study showed higher dielectric permittivity and lower dielectric loss in SR grown TGS crystal.