Investigation of Mn-implanted n-Si by low-energy ion beam deposition
- 作者：Liu ; Lifeng ; Chen ; Nuofu ; Song ; Shulin ; Yin ; Zhigang ; Yang ; Fei ; Chai ; Chunlin ; Yang ; Shaoyan ; et. al.
- 关键词：81.05.Ea ; 81.05.Zx ; 81.15.Hi ; 82.80.Pv ; A1. Auger electron spectroscopy ; A1. X-ray diffraction ; A3. Low-energy ion beam deposition ; B2. Semiconducting silicon
- 刊名：Journal of Crystal Growth
- 出版年：2005
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：January 3, 2005
- 卷：273
- 期：3-4
- 页码：458-463
- 文件大小：278 K
摘要
Mn ions were implanted to n-type Si(001) single crystal by low-energy ion beam deposition technique with an energy of 1000eV and a dose of 7.5×1017cm−2. The samples were held at room temperature and at 300°C during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300°C than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300°C is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300°C has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300°C shows ferromagnetic behavior at room temperature.