A simple model explaining the preferential (1 0 0) orientation of silicon thin films made by aluminum-induced layer exchange

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• 作者：J. Schneider ; A. Sarikov ; J. Klein ; M. Muske ; I. Sieber ; T. Quinn ; H.S. Reehal ; S. Gall and W. Fuhs
• 关键词：A1. Crystallographic orientation ; A1. Nucleation ; A3. Aluminum-induced crystallization ; B2. Semiconducting silicon
• 刊名：Journal of Crystal Growth
• 出版年：2006
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：25 January 2006
• 卷：287
• 期：2
• 页码：423-427
• 文件大小：275 K

摘要

In the aluminum-induced layer exchange process polycrystalline silicon thin films can be formed on foreign substrates at low temperatures. These films exhibit a preferential (1 0 0) crystal orientation, that depends on the annealing temperature. Further, the preferential orientation is sensitive to the nature of the Al oxide layer between the Si and the Al. A model based on preferential nucleation is presented which elucidates a possible origin of the preferential (1 0 0) orientation and its sensitivity to temperature and the aluminum oxide interlayer.