Performance of novel silicon n-in-p planar pixel sensors

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• 作者：C. Gallrapp^a ; A. La Rosa^a ; ^{alessandro.larosa@cern.ch} ; A. Macchiolo^b ; R. Nisius^b ; H. Pernegger^a ; R.H. Richter^c ; P. Weigell^b
• 关键词：Pixel detector ; n-in-p silicon sensors ; ATLAS ; High luminosity-LHC ; Radiation hardness
• 刊名：Nuclear Instruments and Methods in Physics Research Section A ; Accelerators ; Spectrometers ; Detectors and Associated Equipment
• 出版年：2012
• 期刊代码：41_01689002
• 类别：ph
• 出版时间：1 July, 2012
• 卷：679
• 期：Complete
• 页码：29-35
• 文件大小：871 K

摘要

The performance of novel n-in-p planar pixel detectors designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS read-out chip FE-I3.

The characterization of these devices has been performed before and after irradiation up to a fluence of 5脳10¹⁵ 1 MeV n_eqcm^鈭?. Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6卤0.3)%and a high collected charge of about 10 ke for a device irradiated at the maximum fluence and biased at 1 kV.