Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix

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• 作者：R. Aluguri ; S. Das ; S. Manna ; R.K. Singha ; S.K. Rayp> ; p>p>physkr@phy.iitkgp.ernet.inp>
• 关键词：Ge nanocrystals ; Photoluminescence ; Pulsed laser deposition
• 刊名：Optical Materials
• 出版年：2012
• 期刊代码：81_09253467
• 类别：ch
• 出版时间：June, 2012
• 卷：34
• 期：8
• 页码：1430-1433
• 文件大小：639 K

摘要

Erp>3+p> doped Ge nanocrystals embedded in high-k Alb>2b>Ob>3b> matrix were prepared by pulsed laser ablation method. X-ray spectra and transmission electron micrographs have confirmed the formation of Ge nanocrystals and the increase in crystallite size with increasing annealing temperature from 750 掳C to 950 掳C. An enhanced photoluminescence intensity at 1.54 渭m is attained by optimizing the Er concentration. Temperature dependent photoluminescence from samples annealed at different temperatures has shown the existence of thermally activated energy transfer process between Erp>3+p> and Ge nanocrystals.