Interaction of hydrogen with InN thin films elaborated on InP(1 0 0)
- 作者：M. Krawczyk ; A. Biliń ; ski ; J.W. Sobczak ; S. Ben Khalifa ; C. Robert-Goumet ; L. Bideux ; B. Gruzza ; G. Monier
- 关键词：Indium phosphide ; Indium nitride film ; Molecule– ; solid reactions ; Atom– ; solid reactions ; Hydrogen molecule ; Hydrogen atom ; Hydrogenation ; X-ray photoelectron spectroscopy
- 刊名：Surface Science
- 出版年：2007
- 期刊代码：104_00396028
- 类别：ch
- 出版时间：15 September 2007
- 卷：601
- 期：18
- 页码：3722-3725
- 文件大小：316 K
摘要
III–V semiconductor compound structures are widely applied in technology of advanced microelectronics, optoelectronics, and gas sensors. In this paper, we report on the use of XPS to characterize in situ the interaction of thermally activated hydrogen atoms and hydrogen molecules with InP(1 0 0) surfaces covered by thin InN overlayers. XPS spectra were taken with an ESCALAB-210 spectrometer after repeated hydrogenation cycles at temperatures up to 350 °C. The evolution of the In 3d, In 4d, P 2p, N 1s, O 1s and C 1s photoelectron spectra was carefully monitored. The XPS spectra of the hydrogen exposed surface revealed significant differences compared to those from the non-hydrogenated surface. InN films were found to be weakly reactive to hydrogen under experimental conditions explored. The behavior of P atoms at the hydrogenated surface was dependent on the parameters characterizing each hydrogenation (exposure, hydrogen species used, annealing temperature). Moreover, the heavily hydrogenated surface exhibited a phosphorus enrichment.