Growth of Si0.5Ge0.5 Single Crystals by the Traveling Liquidus-zone Method and their Structural Characterization

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• 作者：Atsushi Oda^a ; ^b ; ^{ce01020@meiji.ac.jp} ; Kyoichi Kinoshita^b ; Shin-ichi Yoda^b ; Hiroshi Katsumata^a ; ^{katsumata@meiji.ac.jp} ; Shin-ichiro Uekusa^a
• 关键词：Single crystal growth ; semicouducting binary compounds ; traveling solvent zone growth ; Si0.5Ge0.5
• 刊名：Procedia Engineering
• 出版年：2012
• 期刊代码：P56_18777058
• 类别：et
• 出版时间：2012
• 卷：36
• 期：Complete
• 页码：404-410
• 文件大小：1089 K

摘要

We have succeeded in growing compositionally homogeneous Si0.5Ge0.5 crystals with a newly developed growth method named the travelling liquidus-zone (TLZ) method. In this method, a narrow liquidus-zone saturated by a solute is formed at relatively low temperature gradients, 5 - 15掳C/cm. Since the solubility depends on temperature, solute concentration gradient is established at the freezing interface. The concentration gradient causes diffusion of the solute towards a low concentration side. At the freezing interface, crystal growth proceeds due to the decrease in solute. As a result, solute concentration increases at the opposite side of the zone by transported solute and part of the remaining feed is dissolved. Thus, the zone travels under the temperature gradient spontaneously. Here, we report on 30 mm diameter homogeneous Si0.5Ge0.5 crystal growth by the TLZ method. Compositional homogeneity of grown crystals was excellent but the length of single crystal was limited to about 2 mm and origins of polycrystallization were discussed.