Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods

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• 作者：M. Medu艌a^a ; ^b ; ^{mjme@physics.muni.cz} ; J. R暖啪i膷ka^a ; O. Caha^a ; ^b ; J. Bur&scaron ; í ; k^c ; M. Svoboda^c
• 关键词：Silicon ; Interstitial oxygen ; Precipitation ; X-ray diffraction
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：1 August, 2012
• 卷：407
• 期：15
• 页码：3002-3005
• 文件大小：768 K

摘要

We have investigated oxygen precipitation in Czochralski silicon wafers focusing on influence of nucleation temperature and high temperature pre-anneal during common three step treatment. Thick Si wafers were studied mainly by x-ray diffraction in Laue transmission geometry using Mo x-ray tube, but were also compared to reciprocal space maps obtained in Bragg reflection geometry. The analysis of measured diffraction scans in Laue geometry was performed by means of Takagi equations and statistical dynamical theory of diffraction. From the simulated Laue diffraction curves we find the size of the individual defect area and the fraction of strain area volume in the wafer. The results obtained from x-ray diffraction were compared to loss of interstitial oxygen according to infrared absorption spectroscopy and the size of SiO₂ precipitate core was estimated. These techniques are in agreement with transmission electron microscopy images.