Silicon carbonitride nanolayers 鈥?Synthesis and chemical characterization

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• 作者：P.S. Hoffmann^a ; ^{dg7j@ca.tu-darmstadt.de} ; N.I. Fainer^b ; O. Baake^a ; M.L. Kosinova^b ; Y.M. Rumyantsev^b ; V.A. Trunova^b ; A. Klein^a ; B. Pollakowski^c ; B. Beckhoff^c ; W. Ensinger^a
• 关键词：Silicon carbonitrides ; Chemical vapor deposition ; Speciation ; Fourier transform infrared spectroscopy ; X-ray photoelectron spectroscopy ; Energy dispersive X-ray spectrometry ; Total reflection X-ray fluorescence ; Near edge X-ray absorption fine structure
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 July, 2012
• 卷：520
• 期：18
• 页码：5906-5913
• 文件大小：1299 K

摘要

SiC_xN_y thin films were produced by plasma-enhanced chemical vapor deposition and characterized by ellipsometry, Fourier transform infrared and Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, as well as, by near-edge X-ray absorption fine structure measurements in total-reflection X-ray fluorescence geometry. The temperature of synthesis was varied between 100 掳C and 800 掳C, the precursors hexamethyldisilazane or hexamethylcyclotrisilazane were used with an addition of N₂, He, and NH₃, respectively. The composition of the products was determined to be constant in Si with about 20 at.%, whereas the sum of C and N results in 80 at.%(each varying between 20 and 60 at.%). Consequently, it can be stated, that in the produced silicon carbonitride a network of Si is built with SiCSi, SiCCSi, and SiNSi bridges. The comparison of the chemical composition and of the physical properties shows for the samples produced with He or N₂, respectively (without NH₃) that the refractive index and the absorption coefficient are increasing with an increasing content of carbon in the final formula SiC_{4 鈭?#xA0;n}N_n (with n = 1, 2, or 3).