Formation of Mn-oxide clusters in Mn⁺-implanted SiO₂ probed by soft X-ray emission and absorption spectroscopy

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• 作者：D.A. Zatsepin^a ; ^d ; ^{nexcom@list.ru} ; A. Moewes^b ; A. Hunt^b ; N.V. Gavrilov^c ; E.Z. Kurmaev^d ; S.O. Cholakh^a
• 关键词：Electronic structure ; X-ray emission and absorption spectroscopy ; Ion implantation ; Formal valence state ; Coster&ndash ; Kronig transition
• 刊名：Vacuum
• 出版年：2012
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：27 April, 2012
• 卷：86
• 期：10
• 页码：1615-1617
• 文件大小：410 K

摘要

Mn⁺-implanted a-SiO₂-samples were studied with the help of soft X-ray emission and absorption spectroscopy (Si L_2,3 3d3s聽鈫捖?p_3/2,1/2 and Mn L_2,3 3d4s聽鈫捖?p_3/2,1/2 emission transitions) using synchrotron excitation. The samples were obtained using a pulsed ion source (ion beam current density 鈭?-7聽mA/cm², E_impl.聽=聽30聽keV, ion fluence 鈭?聽脳聽10¹⁷聽cm^鈭?, pulse duration 400聽渭s) without thermal annealing. It was established that Mn-ion provides a formal valence state 2+, so arranging in implanted a-SiO₂ the low-sized MnO antiferromagnetic clusters probably of crystalline type. The data obtained well coincides with the electronic spin resonance results reported earlier.