Influence of sputtering power on composition, structure and electrical properties of RF sputtered CuIn_{1鈭?span style='font-style: italic'>x}Ga_xSe₂ thin films

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• 作者：Zhou Yu^a ; Chuanpeng Yan^a ; Tao Huang^a ; Wen Huang^a ; Yong Yan^a ; Yanxia Zhang^a ; Lian Liu^a ; Yong Zhang^a ; Yong Zhao^a ; ^b ; ^{23191499@qq.com} ; ^{yzhao@swjtu.edu.cn}
• 关键词：Cu(In ; Ga)Se2 thin films ; Sputtering ; Stoichiomertic composition ; Annealing
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 April, 2012
• 卷：258
• 期：13
• 页码：5222-5229
• 文件大小：1453 K

摘要

In this study, Cu(In_1鈭?em>xGa_x)Se₂ (CIGS) thin films were deposited at room temperature by one step radio frequency (RF) magnetron sputtering process. An one-stage vacuum annealing process without selenization was performed to improve properties of the films. Influences of sputtering power on composition, structure and electrical properties of the as-deposited and annealed films were investigated. As the sputtering power not exceeding a proper power of 100 W, the as deposited and annealed films show near stoichiometric composition and polycrystalline chalcopyrite structure. The annealed films exhibit almost the same composition as the as-deposited ones. All the sputtered and annealed films exhibit uniform and compact surface morphology without peeling and cracking. The electrical conductivity measured in 50-290 K range reveal that the 50 W and 100 W deposited films exhibit metal and semiconductor character, respectively. The 100 W deposited film present data consist with thermoionic emission at high temperatures of 200-290 K. However, Mott law with the variable range hopping mechanism is predominant in the low temperature region.