A new validation method for modeling nanogap fabrication by electromigration, based on the Resistance-Voltage (R-V) curve analysis

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• 作者：Ismael Rattalino^a ; ^b ; ^{ismael.rattalino@iit.it} ; Paolo Motto^b ; ^{paolo.motto@polito.it} ; Gianluca Piccinini^b ; ^{gianluca.piccinini@polito.it} ; Danilo Demarchi^a ; ^b ; ^{danilo.demarchi@polito.it}
• 关键词：Electromigration ; EIBJ ; Nanogap ; Validation ; Modeling
• 刊名：Physics Letters A
• 出版年：2012
• 期刊代码：57_03759601
• 类别：ph
• 出版时间：18 June, 2012
• 卷：376
• 期：30-31
• 页码：2134-2140
• 文件大小：577 K

摘要

This Letter presents the validation of a model of electromigration, that is able to simulate nanogap formation by Electromigration Induced Break Junction (EIBJ). To this purpose, a novel validation method was introduced, which is based on the estimation of the deepening atomic flux from a statistical set of Resistance-Voltage (R-V) curves generated during controlled nanogap fabrication. The validation, related to the first cycle of the R-V curves, was successfully performed by observing a high degree of matching between the numerical and experimental atomic fluxes. In addition, the numerical predictions of temperature and density of current were in agreement with the current literature on electromigration. This method is deemed to be useful for providing reliable models of electromigration, which can simulate nanogap formation and become part of the control algorithm in order to improve the process.