Chemical liquid deposition of CuInSe<sub>2sub> and CuIn(S,Se)<sub>2sub> films for solar cells
- 作者：Mahaprasad Kar<sup>asup> ; Hugh W. Hillhouse<sup>asup><sup> ; sup><sup>bsup><sup> ; sup><sup>h2@uw.edusup> ; Rakesh Agrawal<sup>asup><sup> ; sup><sup>agrawalr@purdue.edusup>
- 关键词：Copper indium selinide ; Low temperature ; Non-vacuum technique ; Chemical liquid deposition ; Flexible substrates ; Photovoltaic devices
- 刊名：Thin Solid Films
- 出版年：2012
- 期刊代码：78_00406090
- 类别：ph
- 出版时间：1 June, 2012
- 卷：520
- 期：16
- 页码：5431-5437
- 文件大小：1052 K
摘要
Several non-vacuum based approaches have been employed to deposit the Cu(In,Ga)Se<sub>2sub> layer in photovoltaic devices, but most of them use processing temperatures in the vicinity of 500 掳C. Here, we present the results on a facile solution-based deposition technique for CuInSe<sub>2sub> (CISe) and CuIn(S,Se)<sub>2sub> (CISSe) thin films with deposition temperatures of 300 掳C. Cu<sub>xsub>Se (1.5 鈮?#xA0;x 鈮?#xA0;2) or Cu<sub>ysub>S (1 鈮?#xA0;y 鈮?#xA0;2) precursor films deposited on a substrate were reacted with InCl<sub>3sub> and Se reactants in oleylamine to form CISe or CISSe thin films of the desired thickness, composition and crystal structure. Solar cells processed from these films on Mo-coated glass substrates demonstrated an efficiency of 2%under AM 1.5 illumination. We also present external quantum efficiency and capacitance-voltage measurements from these devices providing insights into the device performance.