Determining factor of MoSe<sub>2sub> formation in Cu(In,Ga)Se<sub>2sub> solar Cells
- 作者：Xiaolong Zhu<sup>asup> ; Zhen Zhou<sup>asup> ; Yaoming Wang<sup>asup><sup> ; sup><sup>wangyaoming@mail.sic.ac.cnsup> ; Lei Zhang<sup>asup> ; Aimin Li<sup>asup> ; Fuqiang Huang<sup>asup><sup> ; sup><sup>bsup><sup> ; sup><sup>huangfq@mail.sic.ac.cnsup>
- 关键词：MoSe2 thickness ; Sputtering pressure ; Na2Sex ; CIGS
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2012
- 期刊代码：81_09270248
- 类别：ce
- 出版时间：June, 2012
- 卷：101
- 期：Complete
- 页码：57-61
- 文件大小：810 K
摘要
The MoSe<sub>2sub> layers, as a necessary interface layer in Cu(In,Ga)Se<sub>2sub>/Mo for high-efficiency Cu(In,Ga)Se<sub>2sub> solar cells, were observed to form in the Mo and CIGS/Mo films during the selenization process. In order to reveal the determining factor of MoSe<sub>2sub>, the correlation of MoSe<sub>2sub> thickness with the Mo sputtering pressure was investigated. The MoSe<sub>2sub> thickness increased with decreasing the sputtering pressure. Furthermore, the dependence of MoSe<sub>2sub> thickness on the deposition time of SiO<sub>2sub> layer and the characterizations of X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy demonstrate that the formation of Na<sub>2sub>Se<sub>xsub> compounds plays a determining role for the formation of MoSe<sub>2sub> layer. The illuminated I-V characterization showed that the high series resistance of the CIGS solar cell was induced by too thick MoSe<sub>2sub> layer. The significant deterioration of efficiency was observed because of the peeling-off of the absorber layer from Mo layer when the MoSe<sub>2sub> layer was too thin.