Ti-doped Gd₂O₃ sensing membrane for electrolyte-insulator-semiconductor pH sensor

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• 作者：Chyuan Haur Kao ; ^{chkao@mail.cgu.edu.tw} ; Jer Chyi Wang ; Chao Sung Lai ; Chuan Yu Huang ; Jiun Cheng Ou ; Hsin Yuan Wang
• 关键词：Ti-doped ; Gd2O3 ; RTA ; EIS sensor
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 March, 2012
• 卷：520
• 期：10
• 页码：3760-3763
• 文件大小：679 K

摘要

The paper reports Ti was added to Gd₂O₃ as pH sensing membrane on silicon combined with proper rapid thermal annealing for the electrolyte-insulator- semiconductor application. It can be found that the high-k Gd₂TiO₅ sensing membrane annealed at 800 掳C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Gd₂TiO₅ sensing membrane shows great promise for future bio-medical device applications.