摘要
Silicon is known to be a poor light emitter. However, once in nanometer scale, it can emit a strong visible and infrared light after excitation. Si nanocrystals (Si-nc) with a diameter of <img src="http://www.sciencedirect.com/scidirimg/entities/223c.gif" alt="not, vert, similar" border=0> 3 nm are produced by implantation of Si ions into amorphous SiO2 followed by thermal annealing. These Si-nc could allow the use of Si for making luminescent devices compatible with optoelectronic integrated circuits. Si ions have been implanted with an energy of 50 and 100 keV to fluences ranging from 2 × 1016 to 3 × 1017 Si/cm2. The effect of Si implantation fluence on the microstructure of the Si-nc and the SiO2 matrix has been examined using TEM and XPS. The size, spatial distribution and concentration of the Si-nc have been investigated by TEM and compared to the depth distribution of implanted Si ions. A crystalline structure of the Si-nc has been observed for local Si concentration in excess larger than <img src="http://www.sciencedirect.com/scidirimg/entities/223c.gif" alt="not, vert, similar" border=0> 3 × 1021 Si/cm3. Moreover, defects (twins, SF's) and faceting have been observed by HRTEM in Si-nc larger than 6 nm. These large Si-nc are produced with a local Si concentration in excess larger than <img src="http://www.sciencedirect.com/scidirimg/entities/223c.gif" alt="not, vert, similar" border=0> 1 x 1022 Si/cm3. XPS has revealed the presence of an oxygen poor surface layer in the SiO2. This effect of oxygen depletion is also visible in TEM over a layer of <img src="http://www.sciencedirect.com/scidirimg/entities/223c.gif" alt="not, vert, similar" border=0> 25 nm.