Electronic band-edge properties of rock salt PbY and SnY (Y= S, Se, and Te)

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• 作者：Nilton Souza Dantas ; Antô ; nio Ferreira da Silva ; Clas Persson
• 关键词：Electronic structure ; Lead chalcogenides ; Tin chalcogenides ; Infrared detectors materials ; Band symmetries
• 刊名：Optical Materials
• 出版年：2008
• 期刊代码：81_09253467
• 类别：ch
• 出版时间：May 2008
• 卷：30
• 期：9
• 页码：1451-1460
• 文件大小：468 K

摘要

The electronic band-edges of lead chalcogenides PbY and tin chalcogenides SnY (where Y = S, Se, and Te) are investigated by the means of a full-potential linearized augmented plane wave (FPLAPW) method and the local density approximation (LDA). All six chalcogenide binaries have similar electronic structures and density-of-states, but there are differences in the symmetry of the band-edge states at and near the Brillouin zone L-point. These differences give the characteristic composition, pressure, and temperature dependences of the energy gap in Pb_1−xSn_xY alloys.