Microstructure and hardness of SiC-TiC nanocomposite thin films prepared by radiofrequency magnetron sputtering
- 作者：Gaku Osugi ; Akihiko Ito ; itonium@imr.tohoku.ac.jp ; Mikinori Hotta ; Takashi Goto
- 关键词：Silicon carbide ; Titanium carbide ; Nanocomposites ; Thin films ; Sputtering ; Spark plasma sintering ; Microstructure ; Indentation
- 刊名：Thin Solid Films
- 出版年：2012
- 期刊代码：78_00406090
- 类别：ph
- 出版时间：1 July, 2012
- 卷：520
- 期：18
- 页码：5851-5855
- 文件大小：814 K
摘要
Silicon carbide-titanium carbide (SiC-TiC) nanocomposite thin films were prepared by radiofrequency magnetron sputtering using SiC-TiC composite targets fabricated by spark plasma sintering. The SiC thin films were amorphous at substrate temperatures below 573 K and crystallized in the cubic crystal system (3C) at substrate temperatures greater than 773 K. Cubic SiC-TiC nanocomposite thin films, which contain a mixture of 3C-SiC and B1-TiC phases, were obtained at a TiC content of greater than 20 mol%. The amorphous films possessed a dense cross-section and a smooth surface. The morphology of the SiC-TiC nanocomposite thin films changed from granular to columnar with increasing substrate temperature. The SiC-TiC nanocomposite thin films prepared at TiC content of 70-80 mol%and substrate temperature of 573 K showed the highest hardness of 35 GPa.