Crossover of magnetoresistance from positive to negative in La_0.5Sr_0.5CoO_{3 鈭?#xa0;蟽}/Si heterostructure

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• 作者：K.X. Jin ; ^{jinkx@nwpu.edu.cn} ; H. Li ; J.Y. Wang ; X.Y. Tan ; S.G. Zhao ; C.L. Chen
• 关键词：Heterostructure ; Rectifying characteristics ; Magnetoresistance
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：30 April, 2012
• 卷：520
• 期：13
• 页码：4493-4496
• 文件大小：471 K

摘要

The magnetoresistance (MR) properties of a heterostructure fabricated by depositing a La_0.5Sr_0.5CoO_{3 鈭?#xA0;蟽} film on an n-type Si substrate have been studied. The heterostructure exhibits a good rectifying behavior. A negative MR at T = 210 K and a positive MR at T = 300 K are observed for all bias currents whereas; for temperatures ranging from 240 to 280 K the MR changes from being positive to negative with the increase of the bias current. The observed behavior of the MR effect is discussed in terms of current-induced ferromagnetic spin order.