Ferroelectric and dielectric multilayer heterostructures based on KTa_0.65Nb_0.35O₃ and Bi_1.5-xZn_0.92-yNb_1.5O_6.92-1.5x-y grown by pulsed laser deposition and chemical solution depo

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• 作者：A. Le Febvrier^a ; S. Dé ; putier^a ; V. Bouquet^a ; V. Demange^a ; S. Ollivier^a ; A.C. Galca^b ; C. Dragoi^b ; R. Radu^b ; L. Pintilie^b ; M. Guilloux-Viry^a ; ^{maryline.guilloux-viry@univ-rennes1.fr}
• 关键词：Bismuth zinc niobium oxide ; Potassium tantalum niobium oxide ; Pulsed laser deposition ; Chemical solution deposition ; Pechini method ; Multilayers ; X-ray diffraction ; Surface morphology
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 May, 2012
• 卷：520
• 期：14
• 页码：4564-4567
• 文件大小：695 K

摘要

Epitaxial growth of Bi_1.5-xZn_0.92-yNb_1.5O_6.92-1.5x-y (BZN) thin films was achieved on (100)_pc LaAlO₃ substrate by pulsed laser deposition (PLD) and by chemical solution deposition based on Pechini process. Effect of bismuth and zinc deficiency on the BZN thin films obtained by PLD was discussed, in relation with the starting target composition. Dielectric permittivity and bandgap values were determined from electrical and spectroscopic ellipsometry measurements performed on randomly oriented films grown on Pt/Si substrate. BZN thin films obtained by PLD exhibit, at 100 kHz, a dielectric constant of 蔚_r = 203 and quite low dielectric losses of tan未 = 5 脳 10^鈭?#xA0;2. Epitaxial ferroelectric 鈭?#xA0;dielectric KTa_0.65Nb_0.35O₃ (KTN) 鈭?#xA0;Bi_1.5-xZn_0.92-yNb_1.5O_6.92-1.5x-y (KTN on BZN and BZN on KTN) bilayers were obtained by PLD on (100)_pc LaAlO₃ with the insertion of a suitable buffer layer of KNbO₃ in the case of KTN on BZN. Such multilayer heterostructures with an epitaxial growth control of each layer are promising candidates for potential integration in microwave devices.