Investigation of the coupling between the outer electrodes in the superconducting double-barrier devices

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• 作者：Nevirkovets ; I.P. ; Evettes ; J.E. ; Blamire ; M.G. ; Barber ; Z.H. ; Goldobin ; E.
• 关键词：74.50. + r ; Stacked junctions ; Josephson effect ; Supercurrent enhancement
• 刊名：Physics Letters A
• 出版年：1997
• 期刊代码：57_03759601
• 类别：ph
• 出版时间：July 28, 1997
• 卷：232
• 期：3-4
• 页码：299-304
• 文件大小：398 K

摘要

It is found experimentally that the critical current in the two-terminal double-barrier Nb/Al-AlO_x-Nb/Al-AlO_x-Nb device is considerably larger than the critical current in the bottom junction of the Nb/Al-AlO_x-Nb/Al-AlO_x-Ta/Nb device of identical planar configuration produced in the same deposition run. Our data suggest that the origin of the phenomena is a direct Josephson coupling between the external electrodes rather than the inductive interaction between the junctions.