X-Ray studies of Al_xGA_1−xAs Implanted with 1.5 MeV As ions

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• 作者：Wierzchowski ; W. ; Wieteska ; K. ; Graeff ; W. ; Turos ; A. ; Grö ; tzschel ; R.
• 关键词：AlGaAS ; Ion implantation ; Lattice strain ; X-ray diffraction
• 刊名：Vacuum
• 出版年：2003
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：March 10, 2003
• 卷：70
• 期：2-3
• 页码：115-121
• 文件大小：263 K

摘要

The MOCVD-grown epitaxial layers of Al_xGa_1−xAs with x=0.43 were implanted at room temperature with 1.5MeV As ions to different doses in the range from 5×10¹³ to 5×10¹⁵cm⁻². The samples were studied with a number of X-ray diffraction methods using synchrotron radiation, in particular, recording of rocking curves with a very small 50×50μm² probe beam and with Bragg-case section topography. The strain profiles were determined by fitting the theoretical rocking curves obtained by numerical integration of the Takagi–Taupin equations.