Protonic defect induced carrier doping in TTFCOO鈭?/sup>NH4+: Tunable doping level by solvent
- 作者：Takeshi Terauchi ; Yuka Kobayashi ; kobayashi.yuka@nims.go.jp ; Hideo Iwai ; Akihiro Tanaka
- 关键词：Protonic defect ; Carrier doping ; XPS ; Salt bridge ; Charge transport
- 刊名：Synthetic Metals
- 出版年：2012
- 期刊代码：77_03796779
- 类别：ph
- 出版时间：April, 2012
- 卷：162
- 期：5-6
- 页码：531-535
- 文件大小：660 K
摘要
The origin of carrier doping in TTFCOO鈭?/sup>NH4+ has been verified to include protonic defect in salt bridge by means of X-ray photoelectron spectroscopy (XPS), for the first time. The emergence of spin in TTFCOO鈭?/sup>NH4+ is tunable over quite a wide range (9-33%) only by selecting a suitable solvent for the salt crystallization. The spin concentration of the solvent-dependent salts weakly correlates with intensity of optical absorption in near-infrared region, values of g-tensor and dc conductivity at rt. The solvents determining doping level of the salt are classified into three categories by self-dissociation ability (pKSH) of solvent, which likely controls inclusion of protonic defect in the salts.