Extracting inter-diffusion parameters of TiC from AES depth profiles

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• 作者：Swart ; H.C. ; Jonker ; A.J. ; Claassens ; C.H. ; Chen ; R. ; Venter ; L.A. ; Ramoshebe ; P. ; Wurth ; E. ; Terblans ; J.J. ; et. al.
• 关键词：TiC ; PRLLS ; Diffusion ; AES ; Activation energy
• 刊名：Applied Surface Science
• 出版年：2003
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：January 31, 2003
• 卷：205
• 期：1-4
• 页码：231-239
• 文件大小：301 K

摘要

The excellent corrosion and wear resistance of titanium carbide gives it a wide range of technological applications. Thin layers Ti (2300Å) and C (2020Å), were deposited onto SiO₂/Si substrates by means of electron beam evaporation in high vacuum. These films were annealed at different temperatures and times (temperatures ranging between 525 and 625°C and annealing times between 4 and 121min) to grow thin films of TiC. Ar⁺ sputter depth profiling, with Auger electron spectroscopy (AES), provided the depth composition of the annealed films. A comparison between AES spectra of C in the graphite and carbide chemical states showed significant differences in both shape and energy of the differentiated peaks. A positive restricted linear least squares (PRLLS) method was used to separate the graphite and carbide contributions from the C profile. The TiC layer thickness for each specimen was obtained. With known TiC thickness and annealing times, the diffusion coefficients as a function of temperature were calculated. An Arrhenius plot yielded an activation energy Q of 207±4kJ/mol and a pre-exponential factor D₀ of 4.1×10⁻⁸m²s⁻¹.