Grain coarsening in gas pressure sintered silicon nitride
- 作者：Peillon ; Florence Cluzel ; Thevenot ; Franç ; ois
- 关键词：D. Silicon nitride ; Grain coarsening ; Diffusion control ; Interface-reaction control
- 刊名：Ceramics International
- 出版年：2002
- 期刊代码：13_02728842
- 类别：ms
- 出版时间：2002
- 卷：28
- 期：6
- 页码：637-643
- 文件大小：395 K
摘要
The grain growth of silicon nitride sintered by GPS has been studied in the case of an α-rich initial powder. As time increases, the microstructure becomes bimodal. A few large grains grow abnormally at the expense of the smallest ones. The growth rate of the major portion of grains is slow and can be assimilated to a normal growth with interface-reaction control. This rate limiting mechanism has been determined by three different methods: a method based on the Kingery’rate laws, a more direct method based on the variation of the grain size vs. the amount of the liquid phase and considerations on grain morphology according to Lee.