Influence of annealing on characteristics of tin disulfide thin films by vacuum thermal evaporation

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• 作者：Chengwu Shi^a ; ^b ; ^{shicw506@gmail.com} ; Zhu Chen^a ; ^b ; Gaoyang Shi^a ; ^b ; Renjie Sun^a ; Xiaoping Zhan^a ; ^b ; Xinjie Shen^a ; ^b
• 关键词：Tin disulfide ; Thin films ; Vacuum thermal evaporation ; Annealing ; X-ray diffraction ; Scanning electron microscopy ; Crystal microstructure
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：31 May, 2012
• 卷：520
• 期：15
• 页码：4898-4901
• 文件大小：791 K

摘要

In this paper, we reported on an approach to prepare tin disulfide (SnS₂) thin films on soda-lime glass substrates by vacuum thermal evaporation using SnS₂ powders as a source. The influence of annealing on the chemical composition, crystal structure, surface morphology, and optical band gap of the SnS₂ thin films was systemically investigated. The as-grown SnS₂ thin film was amorphous, homogeneous, smooth, nearly stoichiometric, with no pinhole and crack free, and with an optical band gap of 2.41 eV. After the SnS₂ thin film was annealed at 300 掳C, the crystallization of SnS₂ was demonstrated by X-ray diffraction and scanning electron microscope with a characteristic of a preferred orientation along (001) plane with hexagonal phase and the sheet appearance of the SnS₂ crystals. At the annealing temperature of 350 掳C, some SnS₂ crystallites and a few pinholes appeared on the surface of the SnS₂ thin films, though the SnS₂ thin film was not oxidized. When the annealing temperature was increased to 400 掳C, SnS₂ was gradually oxidized into an approximate spherical shape of SnO₂ from the top to the bottom of the SnS₂ thin film by trace O₂ in the furnace. Therefore, our experiment suggested that the annealing temperature of the SnS₂ thin film using the vacuum thermal evaporation should not be over 300 掳C as a window layer in compound thin film solar cells.