Fabrication and optical properties of CuS nanowires by sulfuring method
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摘要
In this letter, we successfully synthesize CuxS nanowires by sulfuring the copper nanowires at varied temperatures. When the annealing temperatures reach 400, 450, and 500 °C, the x values are equal to 1.03, 1.26, and 1.43, respectively. The CuxS nanowire arrays are highly ordered and have high wire packing densities. At 400 °C sulfured temperature, the CuS nanowire phase with a strongly preferential peak [110] indicates that the nanowire arrays should point to the [110] direction. The UV–vis spectroscopy measurement shows only one broad absorption peak that appears at 802 nm in near-IR region. This proves that the sulfured nanowire has pure CuS phase.

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