Deposition of TiN films on various substrates from alkoxide solution by plasma-enhanced CVD

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• 作者：Shiro Shimada ; Yoshikazu Takada and Jiro Tsujino
• 关键词：SEM ; X-ray diffraction PACVD ; Alkoxide nitrogen ; Titanium nitride
• 刊名：Surface and Coatings Technology
• 出版年：2005
• 期刊代码：106_02578972
• 类别：ms
• 出版时间：2005
• 卷：199
• 期：1
• 页码：72-76
• 文件大小：764 K

摘要

TiN films were deposited at low temperatures of 300–600 °C on various substrates (Si wafer, silica glass, stainless steel) by injecting titanium tetra-ethoxide (TTEO) solution at a rate of 0.05–0.3 ml min⁻¹ into a N₂ plasma. Parameters affecting the formation of TiN films such as the nature of the substrate, substrate temperature, feed rate of TTEO, and N₂ flow rate were examined. The films were characterized by XRD and scanning electron microscopy and the N and Ti contents determined, together with the O and C impurity contents, by X-ray photoelectron microscopy. The films deposited on Si wafers and silica glass at > 500 °C possessed a columnar structure of well-crystallized particles, whereas those on SUS contained coagulated particles with a greater content of C and O impurities.