Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor

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• 作者：Xuemei Song ; Deepthi Gopireddy ; Christos G. Takoudis
• 关键词：Titanium oxynitride ; Chemical vapor deposition ; TDEAT ; Titanium oxide
• 刊名：Thin Solid Films
• 出版年：2008
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：31 July 2008
• 卷：516
• 期：18
• 页码：6330-6335
• 文件大小：637 K

摘要

In this study, we investigate the use of an amide-based Ti-containing precursor, namely tetrakis(diethylamido)titanium (TDEAT), for TiN_xO_y film deposition at low temperature. Traditionally, alkoxide-based Ti-containing precursor, such as titanium tetra-isopropoxide (TTIP), along with NH₃ is used for titanium oxynitride (TiN_xO_y) film deposition. When TTIP is used, at low temperatures it is difficult to form TiN_xO_y films with high N/O ratios. In this study, by using TDEAT, TiN_xO_y films are deposited on H-passivated Si (100) substrates in a cold wall reactor at 300 °C and 106 Pa. Rutherford backscattering spectroscopy analysis shows nitrogen incorporation in the TiN_xO_y films to be as high as 28 at.%. X-ray photoelectron spectroscopy analysis of as-deposited films confirms the formation of_. TiN_xO_y, while Fourier transform infrared and Raman spectra indicate that the films have amorphous structure. Moreover, there is no detectable bulk carbon impurity and no SiO₂ formation at the TiN_xO_y/Si interface. Upon annealing the as-deposited films in air at 750 °C for 30 min, they oxidize to TiO₂ and crystallize to form a rutile structure with a small amount of anatase phase. Based on these results, TDEAT appears to be a promising precursor for both TiN_xO_y and TiO₂ film deposition.