Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons
- 作者：Lukas Tlustos ; M. Campbell ; C. Frö ; jdh ; Pasi Kostamo ; Seppo Nenonen
- 关键词：GaAs ; Medipix2 ; X-ray imaging
- 刊名：Nuclear Instruments and Methods in Physics Research Section A ; Accelerators ; Spectrometers ; Detectors and Associated Equipment
- 出版年：2008
- 期刊代码：41_01689002
- 类别：ph
- 出版时间：11 June 2008
- 卷：591
- 期：1
- 页码：42-45
- 文件大小：459 K
摘要
A high-purity GaAs sensor of 110 μm thickness has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 keV is presented and compared to the response of a 300 μm thick Si sensor, also bonded to a Medipix2 chip. The measured photopeak responses are used to calibrate both detectors. The depth of depletion of the GaAs sensor is estimated to be 
50 μm at 140 V sensor bias voltage from measurements made using the 8 keV K
line of a Cu target X-ray tube.
50 μm at 140 V sensor bias voltage from measurements made using the 8 keV K line of a Cu target X-ray tube.