A
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thick semi-3D Si sensor has been characterised after bump-bonding to a Medipix2 read-out chip. The bonding quality measured using a
90Sr-source was found to be excellent
(>99.9%). Comparative measurements with respect to a standard planar
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Si sensor comprising
IV-curves, depletion voltage and energy resolution have been performed.
IV-curves and depletion voltages correspond to the values expected from the sensor geometry. The depletion voltage of the semi-3D sensor is significantly lower than the one of the planar sensor. The energy resolution of the semi-3D device has been found to be lower. The uniformity of the pixel response has been measured using a pulsed 1060 nm laser.