Interaction of dopant atoms with stacking faults in silicon

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• 作者：Yutaka Ohno^a ; ^{yutakaohno@imr.tohoku.ac.jp} ; Yuki Tokumoto^a ; Hiroto Taneichi^a ; Ichiro Yonenaga^a ; Kensuke Togase^b ; Sigeto R. Nishitani^b
• 关键词：Silicon ; Stacking faults ; Segregation ; Stacking fault energy
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：1 August, 2012
• 卷：407
• 期：15
• 页码：3006-3008
• 文件大小：361 K

摘要

The width of a stacking fault ribbon bound by a pair of partial dislocations in silicon crystals was unchanged when boron and gallium atoms of p-type dopant were agglomerated nearby the ribbon by annealing, even though the width increased when n-type dopant atoms were agglomerated as previously reported [Y. Ohno, Y. Tokumoto, I. Yonenaga, Thin Solid Films, accepted for publication]. The origin of the width-increase in n-type crystals was proposed as the reduction of the stacking fault energy, from 58卤5 down to 46卤5 mJ/m², due to an electronic interaction between the ribbon and the n-type dopant atoms, and the interaction energy was estimated to be 0.15卤0.05 eV. On the other hand, the interaction of p-type dopant atoms with stacking faults was not detected.