摘要
In this paper nanometer TiN/AlN multilayers have been prepared on silicon substrate by filtered vacuum arc deposition. The structures of the nanometer TiN/AlN multilayer have been studied with X-ray diffraction. The 12 nm TiN/AlN multilayer exhibits (111) and (200) texture, and the 6 and 2 nm thick multilayer exhibits only (200) texture. The multilayer deposited at −100 V bias exhibits a (111) texture, whilst the multilayer deposited at 0 V bias exhibits a (200) texture. At higher bias voltage the peaks become sharper and have a higher intensity in low angle X-ray diffraction. The hardness and elastic modulus of multilayer are dependent on period of multilayer. The hardnesses of the TiN/AlN multilayers are higher than the hardness value suggested by a simple rule of mixture. The peaking hardness of nanometer TiN/AlN multilayers at period of 2 nm was about 42 GPa, much higher than that of 12 nm. The wear resistance of the nanometer TiN/AlN multilayers has also been studied.