The TiN/AlN multilayers deposited by filtered vacuum arc deposition
- 作者：Zhang ; Xu ; Wu ; Xiangying ; Yi ; Zhongzhen ; Zhang ; Tonghe ; Zhang ; Huixing
- 关键词：81.15.Ef ; 81.40.Pq ; 68.65.Ac ; 62.65.+g ; Multilayer ; Filtered arc ; Nanometer ; Wear
- 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
- 出版年：2003
- 期刊代码：42_0168583x
- 类别：ph
- 出版时间：May, 2003
- 卷：206
- 期：Complete
- 页码：382-385
- 文件大小：163 K
摘要
In this paper nanometer TiN/AlN multilayers have been prepared on silicon substrate by filtered vacuum arc deposition. The structures of the nanometer TiN/AlN multilayer have been studied with X-ray diffraction. The 12 nm TiN/AlN multilayer exhibits (111) and (200) texture, and the 6 and 2 nm thick multilayer exhibits only (200) texture. The multilayer deposited at −100 V bias exhibits a (111) texture, whilst the multilayer deposited at 0 V bias exhibits a (200) texture. At higher bias voltage the peaks become sharper and have a higher intensity in low angle X-ray diffraction. The hardness and elastic modulus of multilayer are dependent on period of multilayer. The hardnesses of the TiN/AlN multilayers are higher than the hardness value suggested by a simple rule of mixture. The peaking hardness of nanometer TiN/AlN multilayers at period of 2 nm was about 42 GPa, much higher than that of 12 nm. The wear resistance of the nanometer TiN/AlN multilayers has also been studied.