The electron-hole bilayer tunnel FET

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• 作者：Livio Lattanzio ; ^{livio.lattanzio@epfl.ch} ; Luca De Michielis ^{luca.demichielis@epfl.ch} ; Adrian M. Ionescu ^{adrian.ionescu@epfl.ch}
• 关键词：Band-to-band tunneling ; EHBTFET ; Electron&ndash ; hole bilayer ; Field-effect transistor ; Logic devices ; Silicon&ndash ; germanium ; Subthreshold slope ; Tunnel FET ; Tunnel transistor
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：August, 2012
• 卷：74
• 期：Complete
• 页码：85-90
• 文件大小：1016 K

摘要

We propose a novel tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher drive currents when compared to a lateral p-i-n junction TFET. The device principle and performances are studied by 2D numerical simulations. Output and transfer characteristics, as well as the impact of back gate bias, silicon thickness and gate length on the device behavior are evaluated. Device performances are compared for Si and Ge implementations. Nearly ideal average subthreshold slope (SS_AVG 鈭?#xA0;10 mV/dec over 7 decades of current) and I_ON/I_OFF > 10⁸ at V_D = V_G = 0.5 V are obtained, due to the OFF-ON binary transition which leads to the abrupt onset of the band-to-band tunneling inside the semiconductor channel. Remarkably, for Ge EHBTFETs the I_ON (鈭?1 渭A/渭m at V_DD = 0.5 V) is 10脳 larger than in Ge tunnel FETs and 380脳 larger than in Si EHBTFETs.