UV-O₃ treatment effects on structural changes of low-k thin films

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• 作者：Jaeyeong Heo ; Dail Eom ; Hyeong Joon Kim
• 关键词：Low-k ; UV-O₃ ; Surface modification ; Ru ; Diffusion barrier
• 刊名：Microelectronic Engineering
• 出版年：2007
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：September-October 2007
• 卷：84
• 期：9-10
• 页码：2188-2191
• 文件大小：1340 K

摘要

The UV-O₃ treatment effects on the structural properties of low-k films as a function of the treatment time were investigated in this study. The thickness of the samples proportionally decreased with the surface treatment time due to highly reactive ozone and the process gradually modified surface layer more SiO₂-like. Excessive treatment of longer than 60 s adversely affected the low-k film, increasing the dielectric constant of underlying low-k film. After the UV-O₃ treatment for the optimized treatment time of 60 s, the poor nucleation problem of Ru deposition was solved and fully-covered Ru film on low-k film was obtained.