Manifestations of strain-relaxation in the structure of nano-sized Co-2 脳 2 islands grown on Ag/Ge(111)-鈭? 脳 鈭? surface

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• 作者：Xiao-Lan Huang ; Agnieszka Tomaszewska ; Chun-Liang Lin ; Sung-Lin Tsay ; Chi-Hao Chou ; Tsu-Yi Fu ; ^{phtifu@phy.ntnu.edu.tw}
• 关键词：Co ; Ag ; Ge(111) ; Growth ; Strain ; Scanning tunneling microscopy
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 June, 2012
• 卷：520
• 期：16
• 页码：5304-5308
• 文件大小：1221 K

摘要

We have examined strain-relaxation of Co-2 脳 2 islands grown on the Ag/Ge(111)-鈭? 脳 鈭? surface by analyzing scanning tunneling microscopy images. We have found that the Co-2 脳 2 islands commonly adopt a more compact arrangement as compared to that of the Ge(111) substrate, however they differ in a degree of an atomic compactness. We have not found a distinct relation between strain-relaxation and the island height. Three groups of islands have been identified upon analyzing a correspondence between strain-relaxation and the island size: (i) small islands (not bigger than 80 nm²) with a high atomic compactness, displaying fixed inter-row distances, (ii) small islands with unfixed distances between atomic rows, and (iii) big islands (bigger than 80 nm²) with fixed inter-row distances, but with a less compact atomic arrangement compared to that of the first two groups. We propose a model to account for the relation between the relaxation and the island size.