RF-MEMS switch with through-silicon via by the molten solder ejection method

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• 作者：Shinpei Ogawa ; ^{Ogawa.Shimpei@eb.MitsubishiElectric.co.jp}  ; [Author Vitae] ; Shinnosuke Soda  ; [Author Vitae] ; Sang-Seok Lee¹  ; [Author Vitae] ; Shinichi Izuo  ; [Author Vitae] ; Yukihisa Yoshida  ; [Author Vitae]
• 关键词：RF-MEMS switch ; TSV ; Packaging ; Molten solder
• 刊名：Sensors and Actuators A ; Physical
• 出版年：2012
• 期刊代码：160_09244247
• 类别：et
• 出版时间：July, 2012
• 卷：181
• 期：Complete
• 页码：77-80
• 文件大小：891 K

摘要

A radio frequency-microelectromechanical system (RF-MEMS) switch with through-silicon via (TSV) technology for hermetic packaging was designed and developed using the molten solder ejection method (MSEM). High frequency simulation was used to determine the lowest loss of the shift-aligned ground-signal-ground (GSG) TSV structure. The RF-MEMS with shift-aligned TSV was successfully developed by integrating surface micromachining with MSEM. The electrical properties of RF-MEMS switches with the shift-aligned TSV were measured, and a low insertion loss of 0.1 dB at 15 GHz was achieved for a GSG TSV configuration.