Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

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• 作者：S. Brose^a ; ^{sascha.brose@ilt.fraunhofer.de} ; S. Danylyuk^a ; L. Juschkin^a ; ¹ ; C. Dittberner^a ; K. Bergmann^b ; J. Moers^c ; G. Panaitov^c ; St. Trellenkamp^d ; P. Loosen^a ; D. Grü ; tzmacher^c
• 关键词：Extreme ultraviolet ; Soft X-ray ; Interference lithography ; High efficiency ; Transmission grating ; Filters ; Membrane
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：31 May, 2012
• 卷：520
• 期：15
• 页码：5080-5085
• 文件大小：1055 K

摘要

Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm).

The masks and filters with free standing areas up to 1000 脳 1000 渭m² and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source.