Edge termination techniques for p-type diamond Schottky barrier diodes

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• 作者：K. Ikeda ; H. Umezawa ; S. Shikata
• 关键词：Diamond ; Schottky barrier diode ; Edge termination ; Field plate
• 刊名：Diamond and Related Materials
• 出版年：2008
• 期刊代码：30_09259635
• 类别：ms
• 出版时间：April-May 2008
• 卷：17
• 期：4-5
• 页码：809-812
• 文件大小：579 K

摘要

The superior material properties of diamond power semiconductor devices make them a crucial technology. For high-voltage applications, optimized structures such as electric field edge termination are required for devices. In this paper, we have investigated the optimization of electric field relaxation techniques in oxygen-terminated p-type diamond Schottky barrier diodes and made comparisons with regard to electric field crowding and breakdown in oxides. Due to the low dielectric constant of diamond, Al₂O₃ is appropriate for the fabrication of field plate structures in diamond power devices.