摘要
We have developed a technique to fabricate 鈥渢iled clones鈥? a new type of mosaic wafers. This technique uses 鈥渃loned鈥?substrates, which come from an identical seed substrate. Four to eight 10 mm 脳 10 mm 鈥渃lone鈥?substrates, each at most 1 mm thick, were connected to form one large wafer with a range of area of 20 mm 脳 20 mm-20 mm 脳 40 mm,. These clone substrates could be connected relatively smoothly, with abnormal growth being suppressed, and the boundaries among the constituent clones were almost invisible. In addition to observation of their cross sections, Raman spectra and X-ray diffraction was measured for each of these tiled clones. FWHM of the X-ray rocking curve was around 10-50 arcsec in the areas away from the boundaries.