Manufacturability aspects in low-temperature nickel silicidation: Temperature control and repeatability
- 作者：P.G. Vermont ; X. Pages ; E.H.A. Granneman ; K. Vanormelingen ; K. Verheyden ; S. Mertens
- 关键词：NiSi ; Production monitoring ; Ni(Pt)Si ; Reproducibility ; Temperature control
- 刊名：Microelectronic Engineering
- 出版年：2007
- 期刊代码：91_01679317
- 类别：cp
- 出版时间：November 2007
- 卷：84
- 期：11
- 页码：2572-2574
- 文件大小：228 K
摘要
In this paper, results obtained on nickel silicidation and nickel−platinum silicidation in a RTA system based on conductive heating are presented. It is shown that with the Levitor system, it is possible to obtain silicide uniformities <1%at temperatures as low as 240 °C. Next to these, within-wafer results, run-to-run uniformity results are presented. The run-to-run results, monitored over 18 weeks, show that with the Levitor system the temperature repeatability is within a band of 1.5 °C.
It can be concluded that with the Levitor system excellent within-wafer and run-to-run, uniformities can be obtained at temperatures well within the process window for nickel silicidation.