Improved thermal stability of Ni-silicides on Si:C epitaxial layers

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• 作者：V. Machkaoutsan ; S. Mertens ; M. Bauer ; A. Lauwers ; K. Verheyden ; K. Vanormelingen ; P. Verheyen ; R. Loo ; M. Caymax ; S. Jakschik ; D. Theodore ; P. Absil ; S.G. Thomas ; E.H.A. Granneman
• 关键词：Epitaxy ; SiC stressors ; Silicide ; Ni ; Thermal stability
• 刊名：Microelectronic Engineering
• 出版年：2007
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：November 2007
• 卷：84
• 期：11
• 页码：2542-2546
• 文件大小：628 K

摘要

The thermal stability of Ni-silicides on tensily strained in situ P doped Si:C epitaxial layers was evaluated. The baseline Ni silicidation process was shown to be compatible with Si:C Recessed Source-Drain (RSD) stressors for NMOS strain engineering while the thermal stability of NiSi:C contacts was significantly improved compared to NiSi ones. Dominant degradation mechanism was shown to be the transition to the NiSi₂:C phase. It was demonstrated that the Si:C strain level affects the silicide formation but has no significant effect on the NiSi:C thermal stability. A mechanism responsible for the improved thermal stability of NiSi:C silicides is discussed.