δ-Doping in diamond

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• 作者：Kunze ; M. ; Vescan ; A. ; Dollinger ; G. ; Bergmaier ; A. ; Kohn ; E.
• 关键词：A. Diamond ; B. Chemical vapor deposition ; Doping ; C. Mass spectrometry ; D. Electronic properties
• 刊名：Carbon
• 出版年：1999
• 期刊代码：10_00086223
• 类别：ms
• 出版时间：April 9, 1999
• 卷：37
• 期：5
• 页码：787-791
• 文件大小：735 K

摘要

δ-Boron-doped homoepitaxial diamond films grown by microwave CVD were optimized for field effect transistor application to obtain steep profiles. The critical growth steps of the δ-doped device structures were analyzed and improved using mass spectrometry gas analysis, determining growth- and etch rates, hall-effect-measurements, elastic recoil detection and conductivity measurements. Optimized growth procedures were obtained and residual doping in the gate control layer was compensated using nitrogen. This results in a novel lossy dielectric Junction FET channel with high sheet charge activation and high drain current densities at moderate operation temperatures of 200°C.