摘要
Thin films of undoped and lithium-doped Zinc oxide, (Zn1 鈭?#xA0;xLix)O; x = 0, 0.05, 0.10 and 0.20 were prepared by sol-gel method using spin-coating technique on silicon substrates [(111)Pt/Ti/SiO2/Si)]. The influence of lithium doping on the structural, electrical and microstructural characteristics have been investigated by means of X-ray diffraction, leakage current, piezoelectric measurements and scanning electron microscopy. The resistivity of the ZnO film is found to increase markedly with low levels (x 鈮?#xA0;0.05) of lithium doping thereby enhancing their piezoelectric applications. The transverse piezoelectric coefficient, e31鈦?/sup> has been determined for the thin films having the composition (Zn0.95Li0.05)O, to study their suitability for piezoelectric applications.