Influence of lithium doping on the structural and electrical characteristics of ZnO thin films

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• 作者：T. Anto Johny^a ; Viswanathan Kumar^a ; ^{vkumar10@yahoo.com} ; Hideyuki Imai^b ; Isaku Kanno^b
• 关键词：Piezoelectric properties ; Thin films ; Zinc oxide
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：30 June, 2012
• 卷：520
• 期：17
• 页码：5797-5800
• 文件大小：675 K

摘要

Thin films of undoped and lithium-doped Zinc oxide, (Zn_{1 鈭?#xA0;x}Li_x)O; x = 0, 0.05, 0.10 and 0.20 were prepared by sol-gel method using spin-coating technique on silicon substrates [(111)Pt/Ti/SiO₂/Si)]. The influence of lithium doping on the structural, electrical and microstructural characteristics have been investigated by means of X-ray diffraction, leakage current, piezoelectric measurements and scanning electron microscopy. The resistivity of the ZnO film is found to increase markedly with low levels (x 鈮?#xA0;0.05) of lithium doping thereby enhancing their piezoelectric applications. The transverse piezoelectric coefficient, e₃₁^{鈦?/sup> has been determined for the thin films having the composition (Zn_0.95Li_0.05)O, to study their suitability for piezoelectric applications.}